t4 - lds -0 040 -2, rev . 1 ( 6/ 4 /13 ) ?201 3 microsemi corporation page 1 of 7 1n5711 ub and 1n5712 ub (cc, ca, & d) compliant schottky barrier diode ceramic surface mount qualified per mil -prf- 19500/444 qualified levels : jan, jantx, jantxv and jans description th is 1n5711ub and 1N5712UB s ch ottky barrier diode is ceramic encased and offers military grade qualifications for high - reliability applications . unidirectional as well as doubler, common anode and common cathode polarities are available . ub package also available in : do - 35 pack age ( axial - leaded ) 1n5711 - 1, 1n5712 - 1, 1n6857 - 1, and 1n6858 -1 do - 213aa package (surface mount) 1n5711ur - 1, 1n5712ur - 1, 1n6857ur - 1, and 1n6858ur -1 important: for the latest information, visit our website http://www.microsemi.com . features ? surface mount equivalent of jedec registered 1n5711, 1n5712 numbers . ? jan, jantx, jantxv and commercial qualifications also available per mil - prf - 19500/444 on 1n numbers only. (s ee p art n omenclature for all available options). ? rohs compliant by design . applic ations / benefits ? low reverse leakage characteristics. ? low - profile ceramic surface mount package (see package illustration) . ? esd sensitive to class 1. m axim um ratings @ 25 oc unless otherwise stated msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temperature t j and t stg -6 5 to +150 oc thermal resistance, junction - to - solder pad r ? j sp 100 oc /w average rectified output current: 1n5711 ub (1) 1N5712UB (2) i o 33 75 ma solder temperature @ 10 s 260 o c notes: 1. at t ec and t sp = +140 c, derate i o to 0 at +150 c . 2. at t ec and t sp = +130 c, derate i o to 0 at +150 c . downloaded from: http:///
t4 - lds -0 040 -2, rev . 1 ( 6/ 4 /13 ) ?201 3 microsemi corporation page 2 of 7 1n5711 ub and 1n5712 ub (cc, ca, & d) mechanical and packaging ? case: ceramic . ? terminals: gold p lating over n ickel under plate. ? marking: part number, date code, manufacturers id. ? tape & reel option: standard per eia - 418d . c onsult factory for quantities. ? w eight: approximately 0.04 g rams . ? see p ackage di mensions on last page. part nomenclature jan 1n5711 ub ca reliability level jan = jan level jantx = jantx level jantxv = jantx v level jans = jans level blank = commercial grade jedec type number (s ee electrical characteristic s t able ) polarity ca = common anode cc = common cathode d = doubler blank = unidirectional surface mount package symbols & definitions symbol definition c capacitance: the capacitance in pf at a frequency of 1 mhz and specified voltage. f frequency i r reverse current: the dc current flowing from the external circuit into the cathode terminal at the specified voltage v r . i o average rectified output current: the output current averaged over a full cycle with a 50 hz or 60 hz si ne - wave input and a 180 degree conduction angle. t rr reverse recovery time: the time interval between the instant the current passes through zero when changing f rom the forward direction to the reverse direction and a specified decay point after a peak reverse current occur s. v (br) breakdown voltage: a voltage in the breakdown region. v f forward voltage: a p ositive dc anode - cathode voltage the device will exhibit at a specified forward current. v r reverse voltage: a positive dc cathode - anode voltage below the breakdown region. v rw m working peak reverse voltage: the peak voltage excluding all transient voltages (ref jesd282 - b). also sometimes known historically as piv. common anode (ca) unidirectional (blank) doubler (d) common cathode (ca) downloaded from: http:///
t4 - lds -0 040 -2, rev . 1 ( 6/ 4 /13 ) ?201 3 microsemi corporation page 3 of 7 1n5711 ub and 1n5712 ub (cc, ca, & d) electrical characteristics @ 25 oc unless otherwise noted type number minimum breakdown voltage maximum forward voltage maximum forward voltage working peak reverse voltage maximum rev erse leakage current maximum capacitance @ v r = 0 volts f = 1.0 mhz v ( br ) @ 10 a v f @ 1 ma v f @ i f v rw m i r @ v r c t v olts volts v @ ma v (pk) na v olts pf 1n5711 ub 70 0.41 1.0 @ 15 50 200 50 2.0 1N5712UB 20 0.41 1.0 @ 35 16 150 16 2.0 note: 1. ef fective minority carrier lifetime ( ) is 100 pico seconds . downloaded from: http:///
t4 - lds -0 040 -2, rev . 1 ( 6/ 4 /13 ) ?201 3 microsemi corporation page 4 of 7 1n5711 ub and 1n5712 ub (cc, ca, & d) graphs v f C forward voltage (v) figure 1 i- v curve showing typical forward voltage variation temperature for the 1n 5712 schottky diodes v r C reverse voltage (v) (pulsed) figure 2 1n 5712 typical variation of reverse current (i r ) vs reverse voltage ( v r ) at various temperatures i r C reverse current (na) i f C forward current (ma) downloaded from: http:///
t4 - lds -0 040 -2, rev . 1 ( 6/ 4 /13 ) ?201 3 microsemi corporation page 5 of 7 1n5711 ub and 1n5712 ub (cc, ca, & d) graphs v f C forward voltage (v) figure 3 i C v curve showing typical forward voltage variation with temperature schottky diode 1n5711 v r C revers e voltage (v) (pulsed) figure 4 1n5711 typical variation of reverse current (i r ) vs reverse voltage ( v r ) at various temperatures i f C forward current (ma) i r C reverse current (na) downloaded from: http:///
t4 - lds -0 040 -2, rev . 1 ( 6/ 4 /13 ) ?201 3 microsemi corporation page 6 of 7 1n5711 ub and 1n5712 ub (cc, ca, & d) graphs i f C forward current (ma) (pulsed) figure 5 t ypical dynamic resistance (r d ) vs forward current (i f ) r d C dynamic resistance ( ohms ) downloaded from: http:///
t4 - lds -0 040 -2, rev . 1 ( 6/ 4 /13 ) ?201 3 microsemi corporation page 7 of 7 1n5711 ub and 1n5712 ub (cc, ca, & d) package dimensions symbol dimensions note symbol dimensions note inch millimeters inch millimeters min max min max min max min max bh 0 .046 0 .056 1.17 1.42 ls1 .035 .039 0.89 0.9 9 bl 0 .115 0 .128 2.92 3.25 ls2 .071 .079 1.80 2.01 bw 0 .085 0 .108 2.16 2.74 lw .0 16 .0 24 0.41 0.61 cl - 0 .128 - 3.25 r - .008 - 0.20 cw - 0 .108 - 2.74 r1 - .012 - 0.31 ll1 0 .022 0 .038 0.56 0.97 r2 - .022 - .056 ll2 0 .017 0 .035 0.43 0.89 not es: 1 . dimen sio ns are in in ch es . m illim ete rs a re gi ven fo r in for ma t io n onl y. 2. ceramic package only. 3 . hat che d areas on pack ag e deno te metal li zed area s. 4 . pad 1 = b ase , pad 2 = emi tt e r, pad 3 = c ol l ec to r, pad 4 = s hi e ldi ng c on n ec ted to the li d. 5 . in ac co rd an ce wi th as me y 14 .5m, diame ters a re eq uival en t to x sy mbolog y. downloaded from: http:///
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